impurity defect

基本解释

To reduce the content of structure defect and impurity is also an effect way to raise the resistivity of the films.
结构缺陷和杂质含量较小的金刚石膜具有较高的电阻率。
QDs structure grown by gas source MBE at lower temperature showed a higher QDs coverage, lower defect and impurity density.
气源MBE在较低温度下生长的量子点材料具有较高的量子点覆盖度。
Since pure radioactive ion beam can be implanted into material directly, research on solid physics especially on impurity and defect in semiconductor become possible.
由于可以将纯净放射性核束注入到样品中去，使得其在固态物理特别是涉及到半导体中的杂质和缺陷问题的应用成为可能。